MCR8DSMT4 Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
Número de pieza
componentes Descripción
Lista de partido
MCR8DSMT4 Datasheet PDF : 6 Pages
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MCR8DSM, MCR8DSN
10
TJ = 25°C
8.0
6.0
IGT = 25 mA
4.0
2.0
IGT = 10 mA
0
100
1000
10 K
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate−Cathode Resistance
1000
100
70°C
90°C
TJ = 110°C
10
1.0
100
1000
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
400 V
100
600 V
VPK = 800 V
10
TJ = 110°C
1000
100
IGT = 25 mA
IGT = 10 mA
10
VD = 800 V
TJ = 110°C
1.0
100
1000
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
1.0
100
1000
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
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