FCPF190N60E_F152
N-Channel SuperFET® II MOSFET
600 V, 20.6 A, 190 mΩ
July 2013
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 190 mΩ
• Ultra Low Gate Charge (Typ. Qg = 63 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)
• 100% Avalanche Tested
Aplications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first gener-
ation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance. This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET®II MOSFET
is suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
D
GD S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2013 Fairchild Semiconductor Corporation
1
FCPF190N60E_F152 Rev. C0
G
S
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCPF190N60E_F152
600
±20
±30
20.6*
13.1*
61.8*
400
4.0
2.1
20
100
39
0.31
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF190N60E_F152
3.2
0.5
62.5
Unit
oC/W
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