FCPF190N60E_F152 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCPF190N60E_F152 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FCPF190N60E
Device
FCPF190N60E_F152
Package
TO-220F
Eco Status
Green
Packaging Type
Tube
For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0V, ID = 10mA, TJ = 25°C
600
VGS = 0V, ID = 10mA, TJ = 150°C
650
ID = 10mA, Referenced to 25oC
-
VGS = 0V, ID = 20A
-
VDS = 480V, VGS = 0V
-
VDS = 480V, TC = 125oC
-
VGS = ±20V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.5
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 10A
-
gFS
Forward Transconductance
VDS = 20V, ID = 10A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Qg(tot)
Qgs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
-
VDS = 25V, VGS = 0V
f = 1MHz
-
-
VDS = 380V, VGS = 0V, f = 1.Hz
-
VDS = 0V to 480V, VGS = 0V
-
-
VDS = 380V, ID = 10A
VGS = 10V
-
(Note 4)
-
f =1MHz
-
Typ.
-
-
0.67
700
-
-
-
-
0.16
20
2385
1795
110
42
178
63
10
24
5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
23
VDD = 380V, ID = 10A
VGS = 10V, RG = 4.7Ω
-
14
-
101
(Note 4)
-
15
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/μs
-
-
-
-
-
-
-
308
-
4.8
Quantity
50
Max. Unit
-
V
-
V
-
V/oC
-
V
10
μA
10
±100 μA
3.5
V
0.19
Ω
-
S
3175 pF
2396 pF
165 pF
-
pF
-
pF
82
nC
-
nC
-
nC
-
Ω
56
ns
38
ns
212
ns
40
ns
20.2
A
60.6
A
1.2
V
-
ns
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2013 Fairchild Semiconductor Corporation
2
FCPF190N60E_F152 Rev. C0
www.fairchildsemi.com
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