2SJ587 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Lista de partido
2SJ587 Datasheet PDF : 8 Pages
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2SJ587
Silicon P Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)
RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
• 2.5 V gate drive device.
• Small package (SMPAK)
Outline
ADE-208-801 (Z)
1st.Edition.
June 1999
SMPAK
D
3
2
G
1
S
3
1
2
1. Source
2. Gate
3. Drain
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