2SJ587 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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2SJ587

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SJ587

Typical capacitance vs.

Drain to Source Voltage

100

VGS=0

50 f=1MHz

20

Ciss

10

Coss

5

2

Crss

1

0

-4

-8 -12 -16 -20

Drain to Source Voltage VDS (V)

1000

500

200

100

50

20

10

5

2

1

-0.01

Switching Characteristics

tr

t d(on)

tf

t d(off)

VGS = -4 V, VDD = -10 V

PW = 5 µs, duty < 1 %

-0.02

-0.05

-0.1

Drain Current I D (A)

-0.2

-0.16

-0.12

Reverse Drain Current vs.

Source to Drain Voltage

VGS = 0,5V

-5 V

-10 V

-0.08

-0.04

Pulse Test

0

-0.4 -0.8 -1.2 -1.6 -2.0

Source to Drain Voltage VSD (V)

5

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