2SJ575
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note 2
-30
±20
-100
-400
-100
400
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Unit
V
V
mA
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Drain to source breakdown V(BR)DSS -30
—
voltage
Gate to source breakdown V(BR)GSS ±20
—
voltage
Gate to source leak current IGSS
—
—
Zero gate voltege drain
I DSS
—
—
current
Gate to source cutoff voltage VGS(off)
-1.3
—
Static drain to source on state RDS(on)
—
2.8
resistance
RDS(on)
—
5.7
Forward transfer admittance |yfs|
68
105
Input capacitance
Ciss
—
25
Output capacitance
Coss
—
20
Reverse transfer capacitance Crss
—
8
Turn-on delay time
t d(on)
—
10
Rise time
tr
—
15
Turn-off delay time
t d(off)
—
40
Fall time
tf
—
45
Note: 3. Pulse test
4. Marking is AP
Max
—
—
±5
-1
-2.3
3.3
7.9
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = -100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = -30 V, VGS = 0
ID = -10µA, VDS = -5 V
ID = -50 mA,VGS = -10 V Note 3
ID = -50 mA,VGS = -4 V Note 3
ID = -50 mA, VDS = -10 V Note 3
VDS = -10 V
VGS = 0
f = 1 MHz
ID = -50mA, VGS = -10 V
RL = 200Ω
2