2SJ575 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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2SJ575

Silicon P Channel MOS FET High Speed Switching

Hitachi -> Renesas Electronics 

2SJ575

Typical Capacitance

vs. Drain to Source Voltage

100

VGS = 0

50

f = 1 MHz

20

Ciss

Coss

10

5

Crss

2

1

0 -10 -20 -30 -40 -50

Drain to Source Voltage VDS (V)

1000

500

Switching Characteristics

200

100

tf

50

t d(off)

20

tr

10

t d(on)

5

2

1

-0.01

VGS = -4 V, VDD = -10 V

PW = 5 µs, duty < 1 %

-0.02

-0.05

-0.1

Drain Current I D (A)

Reverse Drain Current vs.

Source to Drain Voltage

-0.5

-0.4

VGS = 0,5 V

-0.3

-5 V

-0.2

-10 V

-0.1

Pulse Test

0

-0.4 -0.8 -1.2 -1.6 -2.0

Source to Drain Voltage VSD (V)

5

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