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BU505F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BU505F; BU505DF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 package with

electrically isolated mounting base.

The BU505DF has an integrated

efficiency diode.

APPLICATIONS

• Horizontal deflection circuits of

colour television receivers.

PINNING

PIN

DESCRIPTION

1 base

2 collector

3 emitter

mb mounting base; electrically

isolated from all pins

123

Front view

MBC668

2

1

MBB008

3

a. BU505F.

2

1

MBB077

3

b. BU505DF.

Fig.1 Simplified outline (SOT186) and symbols.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCESM

VCEO

VCEsat

collector-emitter peak voltage

collector-emitter voltage

collector-emitter saturation

voltage

VF

diode forward voltage

(BU505DF)

ICsat

collector saturation current

IC

collector current (DC)

ICM

collector current (peak value)

Ptot

total power dissipation

tf

fall time

CONDITIONS

VBE = 0

open base

IC = 2 A; IB = 900 mA; see Fig.8

IF = 2 A

see Figs 4 and 5

see Figs 4 and 5

Th ≤ 25 °C; see Fig.2

inductive load; see Fig.10

TYP.

−

−

−

MAX.

1 500

700

1

UNIT

V

V

V

−

1.8

V

−

2

A

−

2.5

A

−

4

A

−

20

W

0.7

−

µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-h

Rth j-a

thermal resistance from junction to external heatsink note 1

note 2

thermal resistance from junction to ambient

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

VALUE

6.35

3.85

55

UNIT

K/W

K/W

K/W

1997 Aug 13

2

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