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BU505F

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BU505F; BU505DF

handbook, halfpage

+ 50 V

100 to 200 Ω

L

horizontal

oscilloscope

vertical

6V

30 to 60 Hz

300 Ω

1Ω

MGE252

handbookI,Chalfpage

(mA)

250

200

100

0

MGE239

min VCE (V)

VCEOsust

Fig.6 Test circuit for collector-emitter

sustaining voltage.

Fig.7 Oscilloscope display for collector-emitter

sustaining voltage.

800

handbook, halfpage

VCEsat

(mV)

600

400

MGB889

handbook1, h.5alfpage

VBEsat

(V)

1

MGB882

200

0

10−1

1

IC (A)

10

IC/IB = 2; Tj = 25 °C.

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

0.5

10−1

1

IC (A)

10

IC/IB = 2; Tj = 25 °C.

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

1997 Aug 13

7

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