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IRF9620PBF

Power MOSFET

Vishay Semiconductors 

IRF9620, SiHF9620

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

-5

VGS = - 10, - 9, - 8, - 7 V

-4

-6V

-3

-2

-1

0

0

-5V

-4V

- 10

- 20

80 µs Pulse Test

- 30

- 40

- 50

91082_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

-5

80 µs Pulse Test

-4

VGS = - 10, - 9, - 8, - 7 V

-3

-6V

-2

-5V

-1

-4V

0

0

-1

-2

-3

-4

-5

91082_03

VDS, Drain-to-Source Voltage (V)

Fig. 3 - Typical Saturation Characteristics

-5

TJ = - 55 °C

-4

TJ = 25 °C

-3

TJ = 125 °C

-2

-1

0

0

80 µs Pulse Test

VDS > ID(on) x RDS(on) max.

-2

-4

-6

-8

- 10

91082_02

VGS, Gate-to-Source Voltage (V)

Fig. 2 - Typical Transfer Characteristics

102

Operation in this area limited

5

by RDS(on)

2

10

100 µs

5

2

1

5

2

0.1

12

1 ms

10 ms

TC = 25 °C

TJ = 150 °C

Single Pulse

5 10 2

5 102 2

5 103

91082_04

Negative VDS, Drain-to-Source Voltage (V)

Fig. 4 - Maximum Safe Operating Area

2.0

1.0

0.5 D = 0.5

0.2 0.2

0.1

0.1

0.05

0.05 0.02

0.01

0.02

0.01

10-5 2

Single Pulse (Transient

Thermal Impedence)

5 10-4 2

5 10-3 2

5 10-2 2

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Per Unit Base = RthJC = 3.12 °C/W

3. TJM - TC = PDM ZthJC(t)

5 0.1 2

5 1.0 2

5 10

91082_05

t1, Square Wave Pulse Duration (s)

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Document Number: 91082

S11-0512-Rev. B, 21-Mar-11

www.vishay.com

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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