IRF9620PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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Lista de partido

IRF9620PBF

Power MOSFET

Vishay Semiconductors 

IRF9620, SiHF9620

Vishay Siliconix

- 15 V

QGS

VG

QG

QGD

Charge

Fig. 18a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 18b - Gate Charge Test Circuit

D.U.T.

+

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

Rg

• dV/dt controlled by Rg

+

• ISD controlled by duty factor “D”

• D.U.T. - device under test

- VDD

Note

• Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = - 10 Va

D.U.T. lSD waveform

Reverse

recovery

Body diode forward

current

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor current

Ripple ≤ 5 %

ISD

Note

a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 19 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91082.

www.vishay.com

6

Document Number: 91082

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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