IRF9630S Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRF9630S Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9630S, SiHF9630S
Vishay Siliconix
VGS
Top - 15 V
- 10 V
101
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
10-1
10-1
91085_01
20 µs Pulse Width
TC = 25 °C
100
101
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
3.0
ID = - 6.5 A
2.5 VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91085_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
VGS
Top - 15 V
101
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
10-1
10-1
91085_02
20 µs Pulse Width
TC = 150 °C
100
101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
1200
1000
800
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
0
100
91085_05
Coss
Crss
101
- VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
25 °C
150 °C
20
ID = - 6.5 A
16
VDS = - 160 V
VDS = - 100 V
12
VDS = - 40 V
8
100
4
91085_03
20 µs Pulse Width
VDS = - 50 V
5
6
7
8
9
10
- VGS, Gate-to-Source Voltage (V)
4
0
0
91085_06
For test circuit
see figure 13
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. D, 02-May-16
3
Document Number: 91085
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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