IRF9630S Ver la hoja de datos (PDF) - Vishay Semiconductors
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Lista de partido
IRF9630S Datasheet PDF : 8 Pages
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www.vishay.com
D.U.T.
+
-
IRF9630S, SiHF9630S
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
Rg
• dV/dt controlled by Rg
+
• ISD controlled by duty factor “D”
• D.U.T. - device under test
- VDD
Note
• Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
Body diode forward
current
D.U.T. VDS waveform
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91085.
S16-0754-Rev. D, 02-May-16
6
Document Number: 91085
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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