IRFPC50A(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFPC50A Datasheet PDF : 8 Pages
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IRFPC50A, SiHFPC50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ab
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 480 V, f = 1.0 MHz
VDS = 0 V to 480 Vc
VGS = 10 V
ID = 11 A, VDS = 480 V
see fig. 6 and 13b
VDD = 300 V, ID = 11 A
RG = 6.2 Ω, RD= 30 Ω
see fig. 10b
MIN.
600
-
2.0
-
-
-
-
7.7
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.65
-
V/°C
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
0.58 Ω
-
-
S
2100
-
270
-
9.7
-
pF
2830
-
74
-
81
-
-
70
-
19
nC
-
28
15
-
40
-
ns
33
-
29
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
-
-
11
integral reverse
G
A
Pulsed Diode Forward Currenta
ISM
p - n junction diode
S
-
-
44
Body Diode Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 Vb
-
-
1.4
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 11 A,
dI/dt = 100 A/µsb
-
500 740 ns
-
4.0
6.0
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91241
S-Pending-Rev. A, 26-Jun-08
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