IRFPC50A(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFPC50A Datasheet PDF : 8 Pages
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IRFPC50A, SiHFPC50A
Vishay Siliconix
100000
10000
1000
100
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 13A
16
12
VDS = 480V
VDS = 300V
VDS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
10
100
1000
1000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91241
S-Pending-Rev. A, 26-Jun-08
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