2SJ546 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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2SJ546

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ546

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.075Ω typ.

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

TO–220CFM

ADE-208-638A (Z)

2nd. Edition

Jun 1998

D

G

S

123

1. Gate

2. Drain

3. Source

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