IRF5NJ3315 Ver la hoja de datos (PDF) - Infineon Technologies
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IRF5NJ3315 Datasheet PDF : 7 Pages
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HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
PD-94287C
IRF5NJ3315
150V, N-CHANNEL
Product Summary
Part Number
IRF5NJ3315
BVDSS
150V
RDS(on)
ID
0.08
20A
Description
Fifth Generation HEXFET® power MOSFETs from IR HiRel
utilize advanced processing techniques to achieve the lowest
possible on-resistance per silicon unit area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device for
use in a wide variety of applications.
These devices are well-suited for applications such as
switching power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temp
Weight
Value
20
12
80
75
0.6
±20
78
12
7.5
3.0
-55 to + 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-20
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