IRF5NJ3315 Ver la hoja de datos (PDF) - Infineon Technologies

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IRF5NJ3315

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

Infineon Technologies 

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

1

TJ= 25 °C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

TJ = 25° C

TJ = 150° C

10

V DS= 50V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2500

2000

VCCGirsssSs

=

=

=

0V,

CCggsd

+

f = 1MHz

Cgd , Cds

Coss = Cds + Cgd

SHORTED

1500

Ciss

1000

500

Coss

Crss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

3

Internation-

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

IRF5NJ3315

4.5V

20µs PULSE WIDTH

1

TJ = 150 °C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5 ID = 20A

2.0

1.5

1.0

0.5

0.0

VGS = 10V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance Vs.

Temperature

20 ID = 12A

16

VDS = 120V

VVDDSS

=

=

75V

30V

12

8

4

FOR TEST CIRCUIT

0

SEE FIGURE 13

0

20

40

60

80

100

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

2018-12-20

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