FQB8P10TM(2013) Ver la hoja de datos (PDF) - Fairchild Semiconductor

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FQB8P10TM
(Rev.:2013)

P-Channel QFET® MOSFET -100 V, -8.0 A, 185 mΩ

Fairchild Semiconductor 

+

VDS

DUT

_

I SD

L

Driver

RG

Compliment of DUT

(N-Channel)

VDD

VGS

• dv/dt controlled by RG

• ISD controlled by pulse period

VGS

( Driver )

D

=

--G--a--t-e--P---u-l-s-e---W---i-d-t-h--

Gate Pulse Period

10V

I SD

( DUT )

VDS

( DUT )

Body Diode Reverse Current

IRM

di/dt

IFM , Body Diode Forward Current

VSD

Body Diode

VDD

Forward Voltage Drop

Body Diode Recovery dv/dt

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation

6

FQB8P10 Rev. C1

www.fairchildsemi.com

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