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EMH2409

N-Channel Power MOSFET 30V, 4A, 59mΩ, Dual EMH8

ON Semiconductor 

Ordering number : ENA1890A

EMH2409

N-Channel Power MOSFET

30V, 4A, 59mΩ, Dual EMH8

http://onsemi.com

Features

• The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

thereby enabling high-density mounting

• 4V drive

• Halogen free compliance

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

When mounted on ceramic substrate (900mm2×0.8mm)

Ratings

Unit

30

V

±20

V

4

A

16

A

1.0

W

1.2

W

150

°C

--55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7045-006

0.2

8

5

0.125 EMH2409-TL-H

Product & Package Information

• Package

: EMH8

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

1

4

0.5

2.0

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

EMH8

LJ

TL

Lot No.

Electrical Connection

8

7

6

5

Semiconductor Components Industries, LLC, 2013

July, 2013

1

2

3

4

62712 TKIM/D1510PE TKIM TC-00002532 No. A1890-1/7

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