EMH2409 Ver la hoja de datos (PDF) - ON Semiconductor

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EMH2409

N-Channel Power MOSFET 30V, 4A, 59mΩ, Dual EMH8

ON Semiconductor 

EMH2409

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=2A

ID=2A, VGS=10V

ID=1A, VGS=4.5V

ID=1A, VGS=4V

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=15V, VGS=10V, ID=4A

IS=4A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=15V

ID=2A

RL=7.5Ω

D

VOUT

EMH2409

P.G

50Ω

S

Ratings

Unit

min

typ

max

30

V

1

μA

±10

μA

1.2

2.6

V

1.66

S

45

59 mΩ

85

119 mΩ

110

155 mΩ

240

pF

45

pF

30

pF

6.2

ns

11

ns

17

ns

7.5

ns

4.4

nC

1.1

nC

0.64

nC

0.82

1.2

V

Ordering Information

Device

EMH2409-TL-H

Package

EMH8

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1890-2/7

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