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BB501M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB501M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-700C (Z)

4th. Edition

Nov. 1998

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain;

PG = 21.5 dB typ. at f = 900 MHz

• Low noise;

NF = 1.85 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4(SOT-143mod)

Outline

MPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

Notes: 1. Marking is “AS–”.

2. BB501M is individual type number of HITACHI BBFET.

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