BB501M Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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BB501M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

Gain Reduction vs.

Gate2 to Source Voltage

0

10

20

30

VDS = VG1 = 5 V

40

VG2S = 4 V

R G = 47 kΩ

50

4

3

2

1

0

Gate2 to Source Voltage V G2S (V)

BB501M

9

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