GP801DDM18 Ver la hoja de datos (PDF) - Dynex Semiconductor

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GP801DDM18

Hi-Reliability Dual Switch IGBT Module

Dynex Semiconductor 

GP800DDM12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T = 25˚C unless stated otherwise

case

Symbol

Parameter

Test Conditions

V

CES

VGES

I

C

IC(PK)

Pmax

Visol

Collector-emitter voltage

VGE = 0V

Gate-emitter voltage

-

Continuous collector current

T = 80˚C

case

Peak collector current

1ms, Tcase = 105˚C

Max. transistor power dissipation

T = 25˚C, T = 150˚C

case

j

Isolation voltage

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Max. Units

1200 V

±20 V

800 A

1600 A

6490 W

4000 V

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

R

th(j-c)

Thermal resistance - transistor (per arm)

Continuous dissipation -

junction to case

Rth(j-c)

Thermal resistance - diode (per arm)

Continuous dissipation -

junction to case

Rth(c-h)

Thermal resistance - case to heatsink (per module) Mounting torque 5Nm

(with mounting grease)

Tj

Junction temperature

Transistor

Diode

Tstg

Storage temperature range

-

Screw torque

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min. Max. Units

-

18 ˚C/kW

-

40 ˚C/kW

-

8 ˚C/kW

-

150 ˚C

-

125 ˚C

–40 125 ˚C

-

5

Nm

-

2

Nm

-

10 Nm

2/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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