GP801DDM18 Ver la hoja de datos (PDF) - Dynex Semiconductor

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GP801DDM18

Hi-Reliability Dual Switch IGBT Module

Dynex Semiconductor 

GP800DDM12

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

td(off)

Turn-off delay time

t

Fall time

f

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

tr

Rise time

E

Turn-on energy loss

ON

Qrr

Diode reverse recovery charge

Tcase = 125˚C unless stated otherwise

Symbol

Parameter

td(off)

Turn-off delay time

tf

Fall time

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

tr

Rise time

EON

Turn-on energy loss

Qrr

Diode reverse recovery charge

Test Conditions

IC = 800A

VGE = ±15V

VCE = 600V

R

G(ON)

=

R

G(OFF)

=

3.3Ω

L ~ 100nH

IF = 800A, VR = 50% VCES,

dIF/dt = 2000A/µs-1

Min. Typ. Max. Units

-

1100 1300 ns

-

150 200 ns

-

130 170 mJ

-

800 900 ns

-

320 400 ns

-

90 130 mJ

-

150 200 µC

Test Conditions

IC = 800A

VGE = ±15V

VCE = 600V

R

G(ON)

=

R

G(OFF)

=

3.3Ω

L ~ 100nH

IF = 800A, VR = 50% VCES,

dIF/dt = 2000A/µs-1

Min. Typ. Max. Units

-

1300 1500 ns

-

200 250 ns

-

170 250 mJ

-

950 1200 ns

-

350 450 ns

-

150 200 mJ

-

200 260 µC

4/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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