K20N60HS Ver la hoja de datos (PDF) - Infineon Technologies

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K20N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW20N60HS

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1nF

15V

120V

480V

10V

100pF

5V

C iss

Coss

C rss

0V

0nC

50nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=20 A)

100nC

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

15µs

10µs

5µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C)

250A

200A

150A

100A

50A

0A

10V 12V 14V 16V 18V

VGE, GATE-EMITETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 600V, Tj ≤ 150°C)

Power Semiconductors

9

Rev. 2.2 June 06

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