2N6261 Ver la hoja de datos (PDF) - Unspecified
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2N6261 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 50W @TC= 25℃
APPLICATIONS
·Power switching circuits
·Series and shunt-regulator dirver and output stages
·High-fidelity amplifiers
·Solenoid drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEV
Collector-Emitter Voltage VBE= -1.5V
90
V
VCER
Collector-Emitter Voltage RBE= 100Ω
85
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.5
℃/W
SPTECH website：www.superic-tech.com
2N6261
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