2N6261 Ver la hoja de datos (PDF) - Unspecified

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2N6261

Silicon NPN Power Transistor

Unspecified 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω

VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A

VBE(on) Base-Emitter On Voltage

IC= 1.5A; VCE= 2V

ICEO

Collector Cutoff Current

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 60V; IB= 0

VCE= 80V; VBE= -1.5V

VCE= 80V; VBE= -1.5V,TC=150℃

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 1.5A ; VCE= 2V

hFE-2

DC Current Gain

IC= 4A; VCE= 2V

fT

Current Gain-Bandwidth Product

IC= 0.2A; VCE= 4V

2N6261

MIN MAX UNIT

80

V

85

V

0.5

V

1.5

V

0.5

mA

0.5

1.0

mA

0.2

mA

25

100

5

0.8

MHz

SPTECH website：www.superic-tech.com

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