TIP160 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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TIP160

Silicon NPN Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

TIP160

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 320V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE (sat)= 2.9V(Max.)@ IC= 10A

APPLICATIONS

·Designed for use in automotive ignition, switching and

motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

320

V

VCEO Collector-Emitter Voltage

320

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

15

A

IB

Base Current- Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

1.0

A

125

W

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W

SPTECH website：www.superic-tech.com

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