TIP160 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Número de pieza
componentes Descripción
Lista de partido
TIP160 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP160
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6.5A,IB= 0.1A
2.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A, IB= 1A
2.9
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 6.5A,IB= 0.1A
2.2
V
ICEO
Collector Cutoff current
VCE= 320V, IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
mA
hFE
DC Current Gain
IC= 4A; VCE= 2.2V
200
VF
C-E Diode Forward Voltage
IF= 10A
3.5
V
Switching Times
td
Delay Time
0.3
μs
tr
Rise Time
tstg
Storage Time
VCC = 33V, IC = 6.5A,
1.5
μs
IB1 = -IB2= 100mA;
tp= 20μs; Duty Cycle≤2%
2.3
μs
tf
Fall Time
2.8
μs
SPTECH website：www.superic-tech.com
2
Share Link: 