IRF620 Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRF620

N-Channel Mosfet Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

·FEATURES

·Low RDS(on)

·VGS Rated at ±20V

·Silicon Gate for Fast Switching Speed

·Rugged

·Low Drive Requirements

isc Product Specification

IRF620

·DESCRITION

·Designed for high speed applications,

such as switching power supplies , AC and DC

motor controls,relay and solenoid drivers and other pulse.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

200

V

±20

V

ID

Drain Current-Continuous

5

A

IDM

Drain Current-Single Plused

20

A

PD

Total Dissipation @TC=25℃

40

W

Tj

Max. Operating Junction Temperature -55~150 ℃

Tstg

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

3.12

80

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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