IRF620 Ver la hoja de datos (PDF) - Inchange Semiconductor
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IRF620 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF620
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 2.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS=0
VSD
Forward On-Voltage
IS= 5A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN MAX UNIT
200
V
2
4
V
0.8
Ω
±500
nA
250
uA
1.8
V
600
pF
300
pF
80
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=100V,ID=5.0A
VGS=10V,RGEN=9.1Ω
RGS=9.1Ω
Tf
Fall Time
MIN
TYP MAX UNIT
40
ns
60
ns
100
ns
60
ns
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