APTM100DA18T1G Ver la hoja de datos (PDF) - Microsemi Corporation
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APTM100DA18T1G Datasheet PDF : 5 Pages
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Low Voltage Output Characteristics
120
VGS=10V
TJ=25°C
90
60
TJ=125°C
30
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
Normalized RDS(on) vs. Temperature
3
VGS=10V
2.5 ID=33A
2
1.5
1
0.5
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Gate Charge vs Gate to Source
12
10 ID=33A
TJ=25°C
8
VDS=200V
VDS=500V
6
VDS=800V
4
2
0
0 100 200 300 400 500 600
Gate Charge (nC)
APTM100DA18T1G
Low Voltage Output Characteristics
70
TJ=125°C
60
50
VGS=6, 7, 8 & 9V
40
30
5V
20
10
4.5V
0
0
5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
Transfert Characteristics
60
VDS > ID(on)xRDS(on)MAX
50 250µs pulse test @ <
0.5 duty cycle
40
TJ=125°C
30
20
TJ=25°C
10
0
0123456
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
1000
100
Coss
Crss
10
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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