APTM100DA18T1G Ver la hoja de datos (PDF) - Microsemi Corporation
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APTM100DA18T1G Datasheet PDF : 5 Pages
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APTM100DA18T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
150
125
100
75
TJ=125°C
50
25
TJ=25°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
7
TJ=125°C
6 VR=800V
120 A
5
60 A
4
3
30 A
2
1
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Trr vs. Current Rate of Charge
400
TJ=125°C
VR=800V
300
120 A
200
60 A
100
30 A
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
50
TJ=125°C
40 VR=800V
120 A
60 A
30 A
30
20
10
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
400
300
200
100
0
1
10
100
1000
VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp.
100
Duty Cycle = 0.5
80
TJ=175°C
60
40
20
0
25 50 75 100 125 150 175
Case Temperature (ºC)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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