IRF440 Ver la hoja de datos (PDF) - Intersil
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IRF440 Datasheet PDF : 7 Pages
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IRF440
Source To Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
D
Rectifier
G
MIN TYP MAX UNITS
-
- 8.0
A
-
-
32
A
Drain to Source Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 8.0A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs
-
- 2.0
V
210 460 970 ns
2
4
8.9
µC
NOTE:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25Ω, peak IAS = 8.0A (Figures 15, 16).
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-3
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
RECTANGULAR PULSE DURATION (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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