ISL8500 Ver la hoja de datos (PDF) - Renesas Electronics
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ISL8500 Datasheet PDF : 15 Pages
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ISL8500
Electrical Specifications
PARAMETER
Unless Otherwise Noted, All Parameter Limits are Established Over the Recommended Operating Conditions
and the Typical Specifications are Measured at the Following Conditions: TA = -40°C To +85°C (Note 5),
VIN = 5.5V to 25V, Unless Otherwise Noted. Typical Values are at TA = +25°C. (Continued)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
ERROR AMPLIFIER
Open-Loop Gain
-
88
-
dB
Gain Bandwidth Product
GBWP
-
15
-
MHz
Slew Rate
SR COMP = 10pF
-
5
-
V/µs
ENABLE SECTION
EN Threshold
Rising Edge
1.2
1.7
2.2
V
Hysteresis
-
400
-
mV
EN Logic Input Current
-1
-
1
µA
FAULT PROTECTION
Thermal Shutdown Temperature
PWM UV Trip Level
PWM UVP Propagation Delay
TSD
THYS
VUV
Rising Threshold
Hysteresis
Referred to Nominal VOUT
-
150
-
°C
-
15
-
°C
70
75
80
%
-
270
-
ns
PWM OCP Threshold
OCP Blanking Time
VIN = VDD = 5V, Note 4
2.56 3.2 3.94
A
-
100
-
ns
POWER GOOD
PG Trip Level Referred to Nominal VOUT
Lower Level, Falling Edge, with typically 15mV
hysteresis
85
88
91
%
Upper Level, Rising Edge, with typically 15mV
hysteresis
108 112 116
%
PG Propagation Delay
-
9
-
µs
PG Low Voltage
PG Leakage Current
SOFT-START SECTION
ISINK = 4mA
VPG = 5.5V, VFB = 0.6V, VDD = 5.5V
-
0.05 0.3
V
-1
-
1
µA
Soft-Start Threshold to Enable Buck
0.9
1
1.1
V
Soft-Start Threshold to Enable PG
2.5
3.0
3.5
V
Soft-Start Voltage High
-
3.45
-
V
Soft-Start Charging Current
20
30
40
µA
Soft-Start Pull-down
POWER MOSFET
VSS = 3.0V
-
25
-
mA
rDS(ON)
IOUT = 100mA, Die Resistance
-
120 200 m
FN6611 Rev 0.00
December 10, 2007
Page 5 of 15
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