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MGY30N60D

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Motorola => Freescale 

MGY30N60D

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 15 Adc)

(VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 30 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1 mAdc)

Threshold Temperature Coefficient (Negative)

Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 25°C)

Energy losses include “tail”

Turn–On Switching Loss

Total Switching Loss

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Turn–Off Switching Loss

(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

Turn–On Switching Loss

Total Switching Loss

Gate Charge

(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc)

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 15 Adc)

(IEC = 15 Adc, TJ = 125°C)

(IEC = 30 Adc)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

Symbol

BVCES

ICES

IGES

VCE(on)

VGE(th)

gfe

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eoff

Eon

Ets

td(on)

tr

td(off)

tf

Eoff

Eon

Ets

QT

Q1

Q2

VFEC

Min

Typ

Max

Unit

600

—

—

870

Vdc

—

—

mV/°C

µAdc

—

—

100

—

—

2500

—

—

250

nAdc

Vdc

—

2.20

2.90

—

2.10

—

—

2.60

3.45

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

—

15

—

Mhos

—

4280

—

pF

—

225

—

—

19

—

—

76

—

ns

—

80

—

—

348

—

—

188

—

—

0.98

1.28

mJ

—

2.00

—

—

2.98

—

—

73

—

ns

—

95

—

—

394

—

—

418

—

—

1.90

—

mJ

—

3.10

—

—

5.00

—

—

150

—

nC

—

30

—

—

45

—

Vdc

—

1.30

1.80

—

1.10

—

—

1.45

2.05

(continued)

2

Motorola TMOS Power MOSFET Transistor Device Data

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