MGY30N60D Ver la hoja de datos (PDF) - Motorola => Freescale
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MGY30N60D Datasheet PDF : 6 Pages
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MGY30N60D
8000
VCE = 0 V
6000
Cies
4000
TJ = 25°C
2000
Coes
Cres
0
0
5
10
15
20
25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
6.4
VCC = 360 V
5.6 VGE = 15 V
TJ = 125°C
4.8
IC = 30 A
4
3.2
20 A
2.4
1.6
10 A
0.8
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
5
VCC = 360 V
4
VGE = 15 V
RG = 20 Ω
TJ = 125°C
3
2
1
0
0
5
10
15
20
25
30
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
20
QT
15
10
Q1
Q2
5
TJ = 25°C
IC = 30 A
0
0
30
60
90
120
150
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
6.5
VCC = 360 V
5.5 VGE = 15 V
RG = 20 Ω
4.5
3.5
2.5
1.5
IC = 30 A
20 A
10 A
0.5
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Junction Temperature
3
VCC = 360 V
VGE = 15 V
TJ = 125°C
2
1
IC = 30 A
20 A
10 A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
Figure 10. Turn–Off Losses versus
Gate Resistance
4
Motorola TMOS Power MOSFET Transistor Device Data
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