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MGW30N60

Insulated Gate Bipolar Transistor

Motorola => Freescale 

MGW30N60

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)

Temperature Coefficient (Positive)

Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 15 Adc)

(VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 30 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1 mAdc)

Threshold Temperature Coefficient (Negative)

Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 25°C)

Energy losses include “tail”

Turn–Off Switching Loss

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

Turn–Off Switching Loss

Gate Charge

(VCC = 360 Vdc, IC = 30 Adc,

VGE = 15 Vdc)

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

(Measured from the emitter lead 0.25″ from package to emitter bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

Symbol

BVCES

BVECS

ICES

IGES

VCE(on)

VGE(th)

gfe

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eoff

td(on)

tr

td(off)

tf

Eoff

QT

Q1

Q2

LE

Min

Typ

Max

Unit

600

—

—

870

Vdc

—

—

mV/°C

25

—

—

Vdc

µAdc

—

—

100

—

—

2500

—

—

250

nAdc

Vdc

—

2.20

2.90

—

2.10

—

—

2.60

3.45

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

—

15

—

Mhos

—

4280

—

pF

—

275

—

—

19

—

—

76

—

ns

—

80

—

—

348

—

—

188

—

—

0.98

1.28

mJ

—

73

—

ns

—

95

—

—

394

—

—

418

—

—

1.90

—

mJ

—

150

—

nC

—

30

—

—

45

—

nH

—

13

—

2

Motorola TMOS Power MOSFET Transistor Device Data

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