MGW30N60 Ver la hoja de datos (PDF) - Motorola => Freescale
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MGW30N60 Datasheet PDF : 6 Pages
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60
TJ = 25°C
40
TYPICAL ELECTRICAL CHARACTERISTICS
VGE = 20 V
17.5 V
15 V
12.5 V
10 V
60
TJ = 125°C
40
MGW30N60
VGE = 20 V
17.5 V
15 V
12.5 V
10 V
20
20
0
0
1
2
3
4
5
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
60
VCE = 100 V
5 µs PULSE WIDTH
40
TJ = 125°C
25°C
20
0
0
1
2
3
4
5
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics, TJ = 125°C
3
VGE = 15 V
80 µs PULSE WIDTH
2.6
IC = 30 A
22.5 A
15 A
2.2
0
5
6
7
8
9
10
11
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
7200
TJ = 25°C
6400
VCE = 0 V
5600
4800
Cies
4000
3200
2400
1600
Coes
800
Cres
0
0
5
10
15
20
25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
1.8
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
16
QT
12
8
Q1
Q2
4
TJ = 25°C
IC = 30 A
0
0
20
40
60
80 100 120 140
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3
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