2N6761 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2N6761 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N6761
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·IDSS 、RDS(ON) ,specified at elevated temperature
·Low drive reqirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
450
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃
4.0
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 ℃/W
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