2N6761 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2N6761 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2N6761
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 2.5A
IGSS
Gate Source Leakage Current
VGS= 20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 450V; VGS= 0
VSD
Diode Forward Voltage
IF= 4.0A; VGS= 0
MIN MAX UNIT
450
V
2
4
V
2.0
Ω
100
nA
1
mA
1.3
V
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