MTSF1P02HD Ver la hoja de datos (PDF) - ON Semiconductor

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MTSF1P02HD

Power MOSFET 1 Amp, 20 Volts

ON Semiconductor 

MTSF1P02HD

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) *

Rating

Symbol

Drain−to−Source Voltage

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

Gate−to−Source Voltage − Continuous

Drain Current − Continuous @ TA = 25°C (Note 2)

Drain Current − Continuous @ TA = 70°C (Note 2)

Drain Current − Pulsed Drain Current (Note 3)

Total Power Dissipation @ TA = 25°C (Note 1)

Linear Derating Factor (Note 1)

VDSS

VDGR

VGS

ID

ID

IDM

PD

Total Power Dissipation @ TA = 25°C (Note 2)

PD

Linear Derating Factor (Note 2)

Operating and Storage Temperature Range

THERMAL RESISTANCE

TJ, Tstg

Rating

Symbol

Typ.

Thermal Resistance − Junction to Ambient, PCB Mount (Note 1)

RθJA

55

Thermal Resistance − Junction to Ambient, PCB Mount (Note 2)

RθJA

125

*Negative signs for P−Channel device omitted for clarity.

1. When mounted on 1″ square FR−4 or G−10 board (VGS = 4.5 V, @ Steady State)

2. When mounted on minimum recommended FR−4 or G−10 board (VGS = 4.5 V, @ Steady State)

3. Repetitive rating; pulse width limited by maximum junction temperature.

Value

20

20

± 8.0

1.8

1.6

14.4

1.8

14.3

0.78

6.25

− 55 to 150

Max.

70

160

Unit

Vdc

Vdc

Vdc

Adc

Apk

Watts

mW/°C

Watts

mW/°C

°C

Unit

°C/W

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