MTSF1P02HD Ver la hoja de datos (PDF) - ON Semiconductor
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MTSF1P02HD Datasheet PDF : 12 Pages
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MTSF1P02HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(Notes 4 & 6)
V(BR)DSS
20
−
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
IGSS
−
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(Cpk ≥ 2.0)
(Note 6)
VGS(th)
(VDS = VGS, ID = 250 µAdc)
0.6
Threshold Temperature Coefficient (Negative)
−
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.8 Adc)
(VGS = 2.7 Vdc, ID = 0.9 Adc)
(Note 6)
RDS(on)
−
−
Forward Transconductance (VDS = 10 Vdc, ID = 0.9 Adc)
(Note 4)
gFS
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDS = 10 Vdc, ID = 1.8 Adc,
tr
−
VGS = 4.5 Vdc, RG = 6.0 Ω) (Note 4)
td(off)
−
Fall Time
tf
−
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 0.9 Adc,
tr
−
VGS = 2.7 Vdc, RG = 6.0 Ω) (Note 4)
td(off)
−
Fall Time
tf
−
Gate Charge
QT
−
(VDS = 10 Vdc, ID = 1.8 Adc,
VGS = 4.5 Vdc)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 1.8 Adc, VGS = 0 Vdc) (Note 4)
VSD
(IS = 1.8 Adc, VGS = 0 Vdc,
−
TJ = 125°C)
−
Reverse Recovery Time
trr
−
(IS = 1.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 4)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
4. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Typ
−
12.8
−
−
−
0.8
2.5
120
160
4.0
440
300
150
15
35
55
75
20
93
50
75
11
0.7
5.5
3.8
1.24
0.9
120
33
87
0.223
Max
Unit
Vdc
−
−
mV/°C
µAdc
1.0
10
100
nAdc
Vdc
−
−
mV/°C
mΩ
160
190
−
Mhos
−
pF
−
−
−
ns
−
−
−
−
−
−
−
22
nC
−
−
−
Vdc
2.0
−
−
ns
−
−
−
µC
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