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RMWB11001

11 GHz Buffer Amplifier MMIC

Raytheon Company 

RMWB11001

11 GHz Buffer Amplifier MMIC

Description

PRODUCT INFORMATION

The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in the

LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave

applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38

GHz transmit/receive chipset. The RMWB11001 utilizes Raytheon’s 0.25µm power PHEMT process and is

sufficiently versatile to serve in a variety of medium power amplifier applications.

Features

4 mil substrate

Small-signal gain 21 dB (typ.)

Saturated power out 19 dBm (typ.)

Voltage detector included to monitor Pout

Chip size 2.0 mm x 1.3 mm

Absolute

Maximum

Ratings

Parameter

Positive DC voltage (+4 V Typical)

Negative DC voltage

Simultaneous (Vd - Vg)

Positive DC Current

RF Input Power (from 50 Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

Electrical

Characteristics Parameter

Min Typ Max Unit

Frequency Range

10.5

11.7 GHz

(At 25°C), 50 Ω

system, Vd=+4 V,

Quiescent Current

Gate Supply Voltage1 (Vg)

Gain Small Signal

(Pin=-10 dBm)

18

-0.5

21

V

dB

Idq=36 mA Gain Variation vs. Frequency

0.5

dB

Power Output Saturated:

(Pin=2 dBm)

17

19

dBm

Drain Current at Psat

(Pin=2 dBm)

55

mA

Symbol

Vd

Vg

Vdg

ID

PIN

TC

Tstg

Rjc

Value

+6

-2

8

104

+8

-30 to +85

-55 to +125

180

Units

Volts

Volts

Volts

mA

dBm

°C

°C

°C/W

Parameter

Power Added Efficiency

(PAE): at Psat

Input Return Loss

(Pin=-10 dBm)

Output Return Loss

(Pin=-10 dBm)

Noise Figure

Detector Voltage

(Pout=+18 dBm)

Min Typ Max Unit

35

%

13

dB

18

dB

4

dB

0.5

V

Functional

Block Diagram2

RF IN

Drain Supply Drain Supply

Vd1

Vd2

MMIC Chip

RF OUT

www.raytheon.com/micro

Ground

(Back of Chip)

Gate Supply

Vg

Output Power

Detector Voltage Vdet

Notes:

1. Typical range of gate voltage is -0.8 to -0.2V to set Idq of 36 mA.

2. Detector delivers approx. 0.5V DC into 3k Ω load resistor for >+18 dBm output power. If output power level detection is not

desired, do not make connection to detector bond pad.

Characteristic performance data and specifications are subject to change without notice.

Revised March 14, 2001

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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