RMWB11001 Ver la hoja de datos (PDF) - Raytheon Company
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RMWB11001 Datasheet PDF : 6 Pages
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RMWB11001
11 GHz Buffer Amplifier MMIC
Figure 1 Dimensions in mm
Chip Layout and
Bond Pad Locations
0.0 0.11
0.577
Chip Size is 2.0 mm
x 1.3 mm x 100 µm.
Back of chip is RF
and DC ground
1.3
1.145
0.873
0.720
0.567
PRODUCT INFORMATION
2.0
1.3
0.873
0.720
0.567
Figure 2
Recommended
Application Schematic
Circuit Diagram
0.0
0.0
0.5 0.65
L = Bond Wire
Inductance
100pF
Drain Supply
Vd=+4 V
10,000pF
L
L 100pF
L
L
0.106
0.0
1.828 2.0
www.raytheon.com/micro
RF IN
MMIC Chip
Ground
(Back of Chip)
RF OUT
L
L
100pF
L
100pF
3 kΩ
10,000pF Output Power
Gate Supply
Detector Voltage
Vg
Vdet
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
Note: Detector delivers approx.
0.5V DC into 3k Ω load resistor for
>+18 dBm output power. If output
power level detection is not
desired, do not make connection to
detector bond pad.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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