IRG4PC30UD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

20

16

12

60% of rated

vo l ta ge

8

4

0

0.1

IRG4PC30UD

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Turn-on losses include

effec ts of revers e recovery

Power D iss ipation = 24W

A

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

TJ = 25°C

TJ = 150°C

10

1

0.1

0.1

VGE = 15V

20µs PU LSE W ID TH A

1

10

VCE , C o lle ctor-to -Em itter Vo ltag e (V)

Fig. 2 - Typical Output Characteristics

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100

TJ = 150°C

10

TJ = 2 5 °C

1

V CC = 10V

0.1

5µs PU LSE W IDTH A

5

6

7

8

9

10

11

12

VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 3 - Typical Transfer Characteristics

3

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