IRG4PC30UD Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC30UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PC30UD

25

V GE = 15V

20

15

10

5

0

A

25

50

75

100

125

150

TC , C ase Tem perature (°C )

3.0

VGE = 15V

80µs PU LSE W IDTH

IC = 24A

2.5

IC = 12A

2.0

IC = 6 .0 A

1.5

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Tem perature (°C)

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

1

D = 0.5 0

0.20

0.10

0.1

0 .05

0 .0 2

0 .0 1

S IN G L E PU LS E

(THERMAL RESPONSE)

PD M

t1

t2

Notes:

1. Duty factor D = t1 / t 2

0.01

2. P eak TJ = P DM x Z th J C + T C

0.00001

0.0001

0.001

0.01

0.1

1

10

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

4

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