IRF331 Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRF331

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRF331

DESCRIPTION

·VGS Rated at ±20V

·Silicon Gate for Fast Switching Speeds

·IDSS,VDS(on),SOA and VGS(th) specified at Elevated

temperature

·Rugged

APPLICATIONS

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER

VALUE UNIT

VDSS

VGS

ID

Ptot

Tj

Tstg

Drain-Source Voltage (VGS=0)

Gate-Source Voltage

350

V

±20

V

Drain Current-continuous@ TC=25℃

5.5

A

Total Dissipation@TC=25℃

75

W

Max. Operating Junction Temperature -55~150 ℃

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-A

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

1.67

30

℃/W

℃/W

isc website：www.iscsemi.cn

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