IRF331 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Lista de partido

IRF331

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA

VGS(TH) Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

RDS(ON)

Drain-Source

Resistance

On-stage VGS= 10V; ID= 3.0A

IGSS

Gate Source Leakage Current

VGS= ±20V; VDS= 0

IDSS

Zero Gate Voltage Drain Current VDS= 350V; VGS= 0

VSD

Diode Forward Voltage

IF= 5.5A; VGS= 0

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VDS=25V,VGS=0V,

F=1.0MHz

·SWITCHING CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

Td(on) Turn-on Delay Time

Tr

Rise Time

Td(off) Turn-off Delay Time

VDD=200V,ID=5.5A

RG=12Ω

Tf

Fall Time

isc Product Specification

IRF331

MIN

TYP MAX UNIT

350

V

2

4

V

1.0

Ω

±100

nA

250

uA

1.6

V

700

pF

150

pF

40

pF

MIN

TYP MAX UNIT

11

17

ns

20

29

ns

35

56

ns

15

24

ns

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

PDF pdfFactory Pro

www.fineprint.cn

Share Link: